AlGaN/GaN High-Electron-Mobility Transistor Using a Trench Structure for High-Voltage Switching Applications
نویسندگان
چکیده
منابع مشابه
A High Efficiency Low-Voltage Soft Switching DC–DC Converter for Portable Applications
This paper presents a novel control method to improve the efficiency of low-voltage DC-DC converters at light loads. Pulse Width Modulation (PWM) converters have poor efficiencies at light loads, while pulse frequency modulation (PFM) control is more efficient for the same cases. Switching losses constitute a major portion of the total power loss at light loads. To decrease the switching losses...
متن کاملSurface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.
We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...
متن کاملa high efficiency low-voltage soft switching dc–dc converter for portable applications
this paper presents a novel control method to improve the efficiency of low-voltage dc-dc converters at light loads. pulse width modulation (pwm) converters have poor efficiencies at light loads, while pulse frequency modulation (pfm) control is more efficient for the same cases. switching losses constitute a major portion of the total power loss at light loads. to decrease the switching losses...
متن کاملA SiGe Heterostructure Bipolar Transistor for High Voltage Power Switching Applications
Study and analysis of a proposed high-voltage high current switching n-p-n silicon germanium single-heterojunction bipolar transistor (SHBT) is performed using 2D MEDICI device simulator. A theoretical formulation is provided to substantiate the simulation results obtained regarding quasi-saturation phenomenon in bipolar transistors. Comparison with the conventional high-voltage current switchi...
متن کاملHydrogen sensing properties of a metamorphic high electron mobility transistor
transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Research
سال: 2012
ISSN: 1916-9647,1916-9639
DOI: 10.5539/apr.v4n4p1